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NAND flash memory

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Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 256-259, November 5–9, 2017,
... memory transmission electron microscopy In situ Carbon Deposition in FIB for Reducing TEM Lamella Curtains Caused by Air Gaps in NAND Flash Memory Hsin-Cheng Hsu, Chun-Hung Lin, Huai-San Ku, Dun-Fan Zhuang, Ru-Hui Lin, Yi-An Chen, Wei-Ming Hsiao, Chin- Chih Yeh, N.-T. Lian, Ta-Hone Yang, K.-C Chen...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 20-22, October 31–November 4, 2021,
... with manual eFuse tuning. electronic fuses machine learning NAND flash memory turnaround time ISTFA 2021: Proceedings from the 47th International Symposium for Testing and Failure Analysis Conference October 31 November 4, 2021 Phoenix Convention Center, Phoenix, Arizona, USA DOI: 10.31399...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 406-409, October 31–November 4, 2021,
... automatically in the course of NAND flash memory manufacturing. Our proposed technique consists of the two steps: pre-processing and hybrid clustering. The pre-processing step based on process primitives efficiently eliminates noisy data. Then, the hybrid clustering step dramatically reduces the total amount...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 42-45, November 15–19, 2020,
...Abstract Abstract In this work, two analysis methods for word line (WL) defect localization in NAND flash memory array are presented. One is to use the Emission Microscope (EMMI) and Optical Beam Induced Resistance Change (OBIRCH) to analyze the device through backside, which has no risk...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 306-308, October 31–November 4, 2021,
...Abstract Abstract This paper presents a novel approach for detecting channel hole bending (ChB) defects in vertical NAND flash memory. Such defects are the result of etching process inconsistencies and contribute to data loss and device failure by inducing leakage current between adjacent...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 347-351, October 31–November 4, 2021,
...Abstract Abstract This paper discusses the development of an automated cell layer counting process for preparing 3D NAND flash memory samples for TEM analysis. In an initial proof-of-concept, several line markings were inscribed on the test device in evenly spaced intervals in order to evaluate...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 592-596, November 5–9, 2017,
... [Fischione Instruments], which allows positioning of the mask within 10 µm. The samples were ion milled with the following parameters: one argon ion beam, 5 kV acceleration voltage, 0° beam angle, and 20° rocking stage motion. Delayering sample preparation 3D V-NAND flash memory top-down delayering The 3D V...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 313-315, October 31–November 4, 2021,
...Abstract Abstract This paper describes the development and implementation of a TEM-based measurement procedure and shows how it is used to determine the verticality or etching angle of channel holes in V-NAND flash with more than 200 layers of memory cells. Despite the high aspect ratio...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 141-145, October 31–November 4, 2021,
... the whole lamella for HAR samples. To achieve the full TEM analysis for such a high aspect ratio sample, especially the middle part, a part of top regions should be removed before TEM sample preparation. In recent years, the higher storage capacity of 3D NAND flash memory has been constantly developed...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 224-231, October 28–November 1, 2018,
... of the MSD Korea team at Thermo Fisher Scientific. References [1] Jung, S.M., Jang, J., Cho, W., Cho, H., Jeong, J., Chang, Y., Kim, J., Rah, Y., Son, Y., Park, J., Three Dimensionally Stacked NAND Flash Memory Technology Using Stacking Single Crystal Si Layers on ILD and TANOS Structure for Beyond 30 nm...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 154-163, November 1–5, 2015,
..., 2006. [7] P. V. Ma, T.P. and Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits, in John Wiley & Sons, 1989, pp. 35 43. [8] M. Bagatin, G. Cellere, S. Gerardin, A. Paccagnella, A. Visconti, and S. Beltrami, TID sensitivity of NAND Flash memory building blocks, IEEE Trans. Nucl...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 295-301, November 10–14, 2019,
..., Lin, T-Y, Hsu, P-L, Hsiao, W-M, Yeh, C-C, Lian, N-T, Yang, T-H, Chen, K-C (2017) In situ Carbon Deposition in FIB for Reducing TEM Lamella Curtains Caused by Air Gaps in NAND Flash Memory. In ISTFA 2017: Proceedings from the 43rd International Symposium for Testing and Failure Analysis (pp. 256-259...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 490-493, November 10–14, 2019,
... Cho Research Institute of Electrical Communication, Tohoku University, Sendai, Japan yasuocho@riec.tohoku.ac.jp, yamasue@riec.tohoku.ac.jp, +81-22-217-5529 Introduction To catch up with the ever-increasing demands for higher performance and larger storage capacity, NAND Flash memory became 3...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 520-524, October 28–November 1, 2018,
... depth is reached. In this example, V-NAND 3D flash memory was milled at 4 kV using the WaferMill system. The BIB milling process was stopped when the memory portion of the device was uncovered. Figure 5, shows SEM images of the delayered area at different magnifications. The homogenous surface obtained...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 22-25, October 28–November 1, 2018,
... of a thermal source in a multi-die stack to the measured thermal rise time. Samples are also prepared with different depth pockets over the top die in the stack to correlate molding compound thickness to thermal rise time. II. SAMPLE PREPARATION The samples used in this experiment are 1TB NAND flash memory...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 133-140, November 15–19, 2020,
... Curtains Caused by Air Gaps in NAND Flash Memory, Proc 43rd Int l Symp for Testing and Failure Analysis, Pasadena, CA, November 2017, p 256-259. [16] Jones, L., Yang, H., Pennycook, T.J., Marshall, M.S.J., Van Aert, S., Browning, N.D., Castell, M.R., and Nellist, P.D., (2015). Smart Align a new tool...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 32-37, November 6–10, 2016,
... unnecessary by providing a visual map of the failing signal. Probing ensues only once the suspect component is identified and further localization is required. Reference 12 discusses debugging the peripheral circuitry of NAND flash memory. In this case, transistors were operated in test mode to optimize...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 341-344, November 15–19, 2020,
.... Czeppel, A Study on the Short- and Long-term Effect of X-Ray Exposure on NAND Flash Memory , IEEE IRPS, pp 751-755, 2011. [10] A. Ditali, M. Kin Ma, and M. Johnston, X-ray Radiation Effect on DRAM Retention Time , IEEE Trans. on Device and Material Reliability, vol 7, pp 105-113, 2007. [11] K. W. Lee, C...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 14-19, November 10–14, 2019,
.... [23] S. Gerardin, M. Bagatin, A. Paccagnella, A. Visconti, S. Beltrami, M. Bertuccio and L. T. Czeppel, "A study on the short- and long-term effects of X-ray exposure on NAND Flash memories," in 2011 International Reliability Physics Symposium, Monterey, CA (USA), 2011. [24] J. R. Srour, D. M. Long, D...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 342-346, October 31–November 4, 2021,
... methods, enabling enhanced process monitoring and control. 3D fiducial 3D NAND memory channel etch offset channel tilt PFIB milling SEM imaging ISTFA 2021: Proceedings from the 47th International Symposium for Testing and Failure Analysis Conference October 31 November 4, 2021 Phoenix...