1-20 of 154 Search Results for

III/V layer

Follow your search
Access your saved searches in your account

Would you like to receive an alert when new items match your search?
Close Modal
Sort by
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 211-216, October 31–November 4, 2021,
... the mapping routine can be optimized to detect extended crystalline defects in III/V layers, selectively grown on shallow trench isolation patterned Si wafers. III/V layer crystalline defects electron channeling contrast imaging epitaxial films nano-ridge structure ISTFA 2021: Proceedings from...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 189-195, November 9–13, 2014,
... mismatch between the underlying silicon and the III- V material, a variety of buffer layers were inserted into each with the objective of preventing defects from reaching the intended InGaAs device layer at the surface. Most wafers produced were run as parts of splits designed to test the effects...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 289-292, November 9–13, 2014,
... 1: Reconstructing the Cs-V curve by substituting the experimental conditions and acquired SHO-SNDM data to Eqs (1) and (2). l Step 2: Determining whether the area under the tip is p- type, n-type, or a depletion layer based on the shape of reconstructed Cs-V curve. On p- and n-type regions...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 146-149, October 31–November 4, 2021,
.../scanning electron microscope (FIB/SEM), an Ar gas ion nanomill, and STEM imaging. III-V compound failure mechanisms accelerated life testing argon ion milling focused ion beam scanning electron microscopy STEM imaging ISTFA 2021: Proceedings from the 47th International Symposium for Testing...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 337-346, November 11–15, 2012,
... spatial coherence of epitaxial layers. Relaxation of initial elastic stress in this group varies between 0% and 55-60% [31, 32]. Structural investigations of different III-Nitride epitaxial structures grown by MBE, Metal-Organic Chemical Vapor Deposition (MOCVD) and Hydride Vapour Phase Epitaxy (HVPE...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 437-442, October 28–November 1, 2018,
... FG 34,5 = : I = 6,67 = : 6,67 = 6,+8 = 1 2 O: P0R 0RT0R5, 5, 5,)V = (2) (3) (4) (5) where is the interface energy, and is the interface width. The parabolic double-obstacle potential FF is defined in the interfacial region only, where 0 < < 1. I is the homogenous free energy of phase...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 82-86, November 1–5, 2015,
... were performed. The three locations were: (1) p-type pinning layer, (2) n-type photocathode, (3) p-type substrate as indicated in Fig. 7. Clear differences between the n, p and p+ regions are evident from the C-V curves. Being able to map out the region with a sMIM-C image at a single fixed bias...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 449-453, November 6–10, 2016,
... Applied to GaN Device In this section we extend the methods discussed above on silicon to a different class of materials, III-V semiconductor materials. We prepared an n-type GaN staircase sample using a GaN subtrate and growing 5 epitaxial layers with varying doping levels. Two of the steps have the same...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 230-233, November 13–17, 2011,
...Abstract Abstract This paper focuses on infrared (IR) thermography capabilities on III-V components for thermal measurements applications and failure analysis (FA). The first part discusses the thermal mapping on InGaAs/AlGaAs PHEMT structure and compares IR thermal measurement with the well...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 289-292, November 15–19, 2009,
... source of concern to IC manufacturing community for they are detriment to device performance. There are, however, instances when they are purposely introduced to enhance the performance of the device. For instance, it is well-known that the elements of group of III or V of the Periodic Table are doped...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 329-335, November 10–14, 2019,
... platform was used to acquire sample images and establish electrical connection to the sample. Current/Voltage (I/V) data was taken with a Keithley 4200A SCS Parameter Analyzer (4200). Higher metal layers were removed through mechanical lapping to the first via layer (V0). Argon ion mill was required...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 399-405, November 11–15, 2012,
...). CRYO-STAGE MODIFIED PROBE 400 Effect of Temperature on Compound Semiconductor Milling It has been reported that gallium in the FIB reacts with certain compound semiconductor materials and alters them chemically and structurally [4]. Specifically, III-V compound semiconductors undergo preferential...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 363-367, October 28–November 1, 2018,
...Abstract Abstract As semiconductor devices continue to shrink, novel materials (e.g. (Si)Ge, III/V) are being tested and incorporated to boost device performance. Such materials are difficult to grow on Si wafers without forming crystalline defects due to lattice mismatch. Such defects can...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 307-310, November 6–10, 2005,
.... It was found that the VEB of the worst sample was 3.5 V, as compared with 8.1 V for a normal device. Figure 3: Backside IR-OBIRCH found a suspicious signal between the base and emitter. II. Physical Failure Analysis A cross-sectional profile inspection was performed by using dynamic FIB observation. This step...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 67-70, November 4–8, 2007,
... and eco- nomic to get a TEM specimen. Results and discussion In the following, we compare the difference of TEM im- ages between these two methods of traditional lift out and this new novel sample preparation. We choose a LED (Light-emission diodes) product for ex- ample since this III-V compound material...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 157-171, November 15–19, 2020,
... are concatenated to form one large list of candidate vias. That list is concatenated with other candidate vias of slices from the same layer grouping (Section III-A1). To wrap up, each tiered circle detector could have produced a list of candidate vias for every layer to be screened for false-positives afterward...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 332-336, November 11–15, 2012,
... on silicon and III-V integrated circuits. This methodology could also be applied for hot spot detection for FA on PCBA. Scanning Acoustic Microscopy The acoustic analysis is a non destructive technique using ultrasound waves to detect defects linked to the presence of air such as porosity, voids, cracks...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 214-219, November 2–6, 2008,
...Abstract Abstract III-V HBT (Heterojunction Bipolar Transistor) and HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 349-352, November 5–9, 2017,
... techniques such as electron beam induced/absorbed current (EBIC/EBAC). Quantitative CL[25] has been used extensively to study ageing effects and reliability issues in advanced III-V semiconductor devices such as nitride-based power devices, light emitting diodes (LEDs) or solid state lasers. The present...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 147-151, November 12–16, 2000,
.... Keywords (3) Solderability Copper oxides UV Reflectance Spectroscopy Topical Area Testing and Device Characterization References 1. R.E. Hummel, E.D. Verink, Jr. and C.W. Shanley, Proc. 6th Int. Congr. Metallic Corrosion, Melbourne, Australia (1975). 2. F.K. Urban III, Dissertation, University of Florida...