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3D NAND memory

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Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 209-214, November 10–14, 2019,
...-NAND device where process induced variation in the high aspect ratio vertical memory channels is measured and to a double stack 3D-NAND architecture, which is comprised of two 32-layer stacks where eccentricity of the pillars was evaluated for layers in both upper and lower stacks. In addition...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 342-346, October 31–November 4, 2021,
... methods, enabling enhanced process monitoring and control. 3D fiducial 3D NAND memory channel etch offset channel tilt PFIB milling SEM imaging ISTFA 2021: Proceedings from the 47th International Symposium for Testing and Failure Analysis Conference October 31 November 4, 2021 Phoenix...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 386-389, November 5–9, 2017,
... to polycrystalline grains. Examples of difficult metrology layers in the memory market include measuring the alternating layers of low-Z silicon dioxide (SiO2) and silicon nitride (Si3N4) or the titanium nitride (TiN) liner in planar 3D NAND lamella. Automated S/TEM (auto-S/TEM) and by extension automated energy...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 347-351, October 31–November 4, 2021,
...Abstract Abstract This paper discusses the development of an automated cell layer counting process for preparing 3D NAND flash memory samples for TEM analysis. In an initial proof-of-concept, several line markings were inscribed on the test device in evenly spaced intervals in order to evaluate...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 313-315, October 31–November 4, 2021,
... channel hole and it is connected to the threshold voltage of the flash memory [3]. Recently, the angle, offset of the hole and each layer CD in the 3D NAND are measured in nanoscale using transmission electron microscope. Nanoscale metrology using transmission electron microscope is very important...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 592-596, November 5–9, 2017,
..., as well as a precise and controlled delayering process [7]. Experiment The experiment was performed on two commercially available devices: 3D vertical stack memory (Samsung 3D V-NAND) and a solid-state drive (SSD) containing air gap architecture [Intel]. The devices were chosen because the elaborate...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 141-145, October 31–November 4, 2021,
... the whole lamella for HAR samples. To achieve the full TEM analysis for such a high aspect ratio sample, especially the middle part, a part of top regions should be removed before TEM sample preparation. In recent years, the higher storage capacity of 3D NAND flash memory has been constantly developed...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 306-308, October 31–November 4, 2021,
...Abstract Abstract This paper presents a novel approach for detecting channel hole bending (ChB) defects in vertical NAND flash memory. Such defects are the result of etching process inconsistencies and contribute to data loss and device failure by inducing leakage current between adjacent...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 224-231, October 28–November 1, 2018,
... features such as 3D Vertical NAND memory structures, conventional ion beam milling perpendicular to the top sample surface causes unacceptable artifacts, such as distortion and curtaining on the cut face [8]. With the diagonal slice and view process, the user has two major advantages: comprehensive...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 227-231, November 10–14, 2019,
...Abstract Abstract The development of vertical 3D NAND technology over the past 5 years has been accelerated by the parallel development of metrology techniques capable of characterizing these device stacks. Current trends point toward a continuous scaling of dimensions along the z-axis...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 520-524, October 28–November 1, 2018,
... deprocessing is removing device material one layer at a time or removing layers until a desired depth is reached. In this example, V-NAND 3D flash memory was milled at 4 kV using the WaferMill system. The BIB milling process was stopped when the memory portion of the device was uncovered. Figure 5, shows SEM...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 154-163, November 1–5, 2015,
... technologies. We perform a 3D imaging using an advanced X-ray machine on Intel flash memories, Macronix flash memories, Xilinx Spartan 3 and Spartan 6 FPGAs. Electrical functionalities are then tested in a systematic procedure after each round of tomography to estimate the impact of X-ray on Flash erase time...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 490-493, November 10–14, 2019,
...Abstract Abstract In this paper, the authors report their successful attempt to acquire the scanning nonlinear dielectric microscopy (SNDM) signals around the floating gate and channel structures of the 3D Flash memory device, utilizing the custom-built SNDM tool with a super-sharp diamond tip...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 14-19, November 10–14, 2019,
.... [23] S. Gerardin, M. Bagatin, A. Paccagnella, A. Visconti, S. Beltrami, M. Bertuccio and L. T. Czeppel, "A study on the short- and long-term effects of X-ray exposure on NAND Flash memories," in 2011 International Reliability Physics Symposium, Monterey, CA (USA), 2011. [24] J. R. Srour, D. M. Long, D...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 203-205, October 31–November 4, 2021,
... the line broadening [3]. Channel Poly crystallinity, grain size and grain boundaries characteristics have direct impact on 3D-NAND cells performance and reliability. While the channel Poly deposition and crystallization are critical, today proper inline metrology to monitor the conformal Poly layer...