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3D NAND flash memory

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Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 347-351, October 31–November 4, 2021,
...Abstract Abstract This paper discusses the development of an automated cell layer counting process for preparing 3D NAND flash memory samples for TEM analysis. In an initial proof-of-concept, several line markings were inscribed on the test device in evenly spaced intervals in order to evaluate...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 141-145, October 31–November 4, 2021,
... the whole lamella for HAR samples. To achieve the full TEM analysis for such a high aspect ratio sample, especially the middle part, a part of top regions should be removed before TEM sample preparation. In recent years, the higher storage capacity of 3D NAND flash memory has been constantly developed...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 313-315, October 31–November 4, 2021,
... channel hole and it is connected to the threshold voltage of the flash memory [3]. Recently, the angle, offset of the hole and each layer CD in the 3D NAND are measured in nanoscale using transmission electron microscope. Nanoscale metrology using transmission electron microscope is very important...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 224-231, October 28–November 1, 2018,
... nm Node , Proc International Electron Devices Meeting (IEDM), San Francisco, CA, December 2006, pp. 1 4. [2] Micheloni, R., Crippa, L., Zambelli, C., Olivo, P., Architectural and Integration Options for 3D NAND Flash Memories , Computers 6 (2017), 27. [3] Luo, Y., Ghose, S., Cai, Y., Haratsch, E.F...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 592-596, November 5–9, 2017,
... [Fischione Instruments], which allows positioning of the mask within 10 µm. The samples were ion milled with the following parameters: one argon ion beam, 5 kV acceleration voltage, 0° beam angle, and 20° rocking stage motion. Delayering sample preparation 3D V-NAND flash memory top-down delayering The 3D V...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 306-308, October 31–November 4, 2021,
...Abstract Abstract This paper presents a novel approach for detecting channel hole bending (ChB) defects in vertical NAND flash memory. Such defects are the result of etching process inconsistencies and contribute to data loss and device failure by inducing leakage current between adjacent...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 342-346, October 31–November 4, 2021,
... methods, enabling enhanced process monitoring and control. 3D fiducial 3D NAND memory channel etch offset channel tilt PFIB milling SEM imaging ISTFA 2021: Proceedings from the 47th International Symposium for Testing and Failure Analysis Conference October 31 November 4, 2021 Phoenix...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 154-163, November 1–5, 2015,
... technologies. We perform a 3D imaging using an advanced X-ray machine on Intel flash memories, Macronix flash memories, Xilinx Spartan 3 and Spartan 6 FPGAs. Electrical functionalities are then tested in a systematic procedure after each round of tomography to estimate the impact of X-ray on Flash erase time...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 490-493, November 10–14, 2019,
...Abstract Abstract In this paper, the authors report their successful attempt to acquire the scanning nonlinear dielectric microscopy (SNDM) signals around the floating gate and channel structures of the 3D Flash memory device, utilizing the custom-built SNDM tool with a super-sharp diamond tip...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 227-231, November 10–14, 2019,
... devices yielding assessment of statistically significant trends in the planar cell area, eccentricity, and position of the bits as a function of depth. Introduction 3D NAND Thanks to the 3D NAND architecture, manufacturers of the technology have a clear vision toward the future of non- volatile flash...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 520-524, October 28–November 1, 2018,
... deprocessing is removing device material one layer at a time or removing layers until a desired depth is reached. In this example, V-NAND 3D flash memory was milled at 4 kV using the WaferMill system. The BIB milling process was stopped when the memory portion of the device was uncovered. Figure 5, shows SEM...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 14-19, November 10–14, 2019,
.... [23] S. Gerardin, M. Bagatin, A. Paccagnella, A. Visconti, S. Beltrami, M. Bertuccio and L. T. Czeppel, "A study on the short- and long-term effects of X-ray exposure on NAND Flash memories," in 2011 International Reliability Physics Symposium, Monterey, CA (USA), 2011. [24] J. R. Srour, D. M. Long, D...