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Intermetallic phases
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Proceedings Papers
ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 40-43, October 31–November 4, 2021,
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This paper presents the results of an investigation to gain a better understanding of the impact of wafer substrate copper (Cu) contamination on FinFET devices. A chip from a wafer free of Cu contamination and several chips near a Cu contaminated wafer edge were sampled for chemical, structural, and morphological analysis and electrical device performance testing. The contaminated wafer was also annealed at high temperature, trying to drive Cu diffusion further into the Si substrate. TEM analysis revealed that the Cu interacted with Si to form a stable η-Cu 3 Si intermetallic compound. SIMS analysis from the backside of the wafer detected no Cu even after most of the backside material was removed. Likewise, electrical nanoprobing showed no parametric drift in the FinFETs near the edge of the wafer, comparable to device behavior in a Cu-free Si substrate. These results indicate that the formation of η-Cu 3 Si with a well-defined crystalline structure and stable stoichiometry immobilizes Cu diffusion in the Si substrate. In other words, the impact of Cu diffusion in silicon has no effect on device performance as long as η-Cu 3 Si does not form in the FinFET channel or short any structures within the chip.
Proceedings Papers
ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 297-300, November 3–7, 2013,
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This paper presents a quick, reliable, and fully quantitative method of measuring the intermetallic coverage of copper to aluminium bonding at time zero and post reliability stressing. This method is currently used in select manufacturing quality control processes, as well as during product release procedures. By applying this measurement method after various life-tests, it has been possible to collect information on degradation in the copper aluminium system which is currently being used to make a model of the corrosion mechanism in the copper aluminium system.
Proceedings Papers
ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 310-315, November 11–15, 2012,
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Cu needs a higher level of ultrasound combined with bonding force to be bonded to the Al pad properly, not just because Cu is harder than Au, but it is also harder to initiate intermetallic compounds (IMC) formation during bonding. This increases the chances of damaging the metal/low k stack under the bondpad. This paper presents a fundamental study of IMC as well as one example of a failure mode of Cu/Al bonded devices, all based on detailed analysis using scanning electron microscopy, scanning transmission electron microscopy, energy dispersive spectrometers, and transmission electron microscopy. It presents a case study showing a corrosion mechanism of Cu/Al ballbond after 168hr UHAST stress. It is observed that all Cu9Al4 was consumed, while very little copper aluminide remained after 168 hours of UHAST stressing.
Proceedings Papers
ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 181-185, November 14–18, 2010,
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This paper presents a mechanical cross-sectioning approach that produces an image clarity not yet demonstrated in published literature. It demonstrates how a critical sequence of polishing, basic slurry optimization and staining, in conjunction with correct imaging parameters can be used to highlight the growth morphology of the intermetallic compound (IMCs). Utilizing this approach, the paper describes the results of a SEM imaging study of the intermetallic formation and growth at the Cu-Al bond interface during thermal ageing for up to 4000hrs at 150 deg C. The paper uses direct SEM imaging to catalog observations which are used to create an initial model for IMC and void growth at the wire bonded interface. It examines the effect of aluminum splash and concludes that growth of intermetallics at the Cu-Al interface is rapid into the bond-pad aluminum than into the Cu-ball, but the growth thickness uniformity is much higher into the Cu-ball.
Proceedings Papers
Prong Kongsubto, Sirarat Kongwudthiti, Nuannapa Santipruksawong, Jinusda Tippayamontri, Tewarit Promket ...
ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 361-369, November 12–16, 2006,
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The monitoring of intermetallic compound (IMC) at solder joints has become more important recently because it is understood that IMC thickness and composition are the factors which determine the quality and reliability of solder joints. Normally it is quite difficult to view IMC optically due to its small (nanometer scale) thickness so scanning electron microscope (SEM) imaging is required to perform the observation. However, the most important factor for successful observation is the sample preparation, the grinding, polishing, and etching process in particular. Therefore, in this work we will discuss our experiments to develop an effective sample preparation technique to facilitate the observation of the IMC at the solder joint. Proper sample preparation will provide a good contrast between the IMC and surrounding metals under the SEM. We used the following 2 sample preparation techniques for ease of IMC observation: Fine polishing process: Polishing the sample with diamond compound followed by silica. Acid etching process: Etching the sample in HNO3 solution. This process is relatively simple and takes less time than polishing but acid etching will damage the solder so that this method is not suitable if analysis of the solder ball is also needed.