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Aluminum-copper alloys
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Proceedings Papers
Al-Cu Alloy Films Characterization and Studies Using TOF-SIMS, XPS, AFM, EBSD and TEM
Available to Purchase
ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 496-501, November 9–13, 2014,
Abstract
View Papertitled, Al-Cu Alloy Films Characterization and Studies Using TOF-SIMS, XPS, AFM, EBSD and TEM
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for content titled, Al-Cu Alloy Films Characterization and Studies Using TOF-SIMS, XPS, AFM, EBSD and TEM
Aluminum-copper alloys are popular for many applications that take advantage of the combination of properties in the alloys. This paper describes the use of multiple advanced failure analysis tools to analyze the physical and chemical properties of Al-Cu alloy thin films.
Proceedings Papers
Highly Resistive AlN Formation in TiN / AlCu / TiN Stack Evidenced by EELS TEM and XPS
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ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 304-308, November 14–18, 2010,
Abstract
View Papertitled, Highly Resistive AlN Formation in TiN / AlCu / TiN Stack Evidenced by EELS TEM and XPS
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for content titled, Highly Resistive AlN Formation in TiN / AlCu / TiN Stack Evidenced by EELS TEM and XPS
Electrical resistance of M1/M3 stack for Aluminium based technology showed anomalous values when no Ti is inserted between AlCu and cap TiN. Process investigations lead to suspect formation of AlN layer at this interface. Blanket wafers were processed at different temperatures to reproduce the layer formation and characterize the film by numerous techniques including XPS and EELS-TEM profiling. Full use of the different results shows the formation of a very thin (a few nms) and highly resistive AlN layer at the cap TiN / AlCu interface as well as a thicker but less resistive AlN layer at the bottom TiN / AlCu interface. PVD process changes were attempted to reduce the M1/M3 button stack resistance. Modification of the N2/Ar flow ratio for TiN sputtering shows slightly more stoechiometric TiN with reduced stack resistance by 35%.
