Abstract This paper describes the investigation of donut-shaped probe marker discolorations found on Al bondpads. Based on SEM/EDS, TEM/EELS, and Auger analysis, the corrosion product is a combination of aluminum, fluorine, and oxygen, implying that the discolorations are due to the presence of fluorine. Highly accelerated stress tests simulating one year of storage in air resulted in no new or worsening discolorations in the affected chips. In order to identify the exact cause of the fluorine-induced corrosion, the authors developed an automated inspection system that scans an entire wafer, recording and quantifying image contrast and brightness variations associated with discolorations. Dark field TEM images reveal thickness variations of up to 5 nm in the corrosion film, and EELS line scan data show the corresponding compositional distributions. The findings indicate that fluorine-containing gases used in upstream processes leave residues behind that are driven in to the Al bondpads by probe-tip forces and activated by the electric field generated during CP testing. The knowledge acquired has proven helpful in managing the problem.

Abstract In wafer fabrication (Fab), Fluorine (F) based gases are used for Al bondpad opening process. Thus, even on a regular Al bondpad, there exists a low level of F contamination. However, the F level has to be controlled at a lower level. If the F level is higher than the control/spec limits, it could cause F-induced corrosion and Al-F defects, resulting in pad discoloration and NSOP problems. In our previous studies [1-5], the theories, characteristics, chemical and physical failure mechanisms and the root causes of the F-induced corrosion and Al-F defects on Al bondpads have been studied. In this paper, we further study F-induced corrosion and propose to establish an Auger monitoring system so as to monitor the F contamination level on Al bondpads in wafer fabrication. Auger monitoring frequency, sample preparation, wafer life, Auger analysis points, control/spec limits and OOC/OOS quality control procedures are also discussed.

Abstract In wafer fabrication, Fluorine (F) contamination may cause fluorine-induced corrosion and defects on microchip Aluminum (Al) bondpads, resulting in bondpad discoloration or non-stick on pads (NSOP). Auger Electron Spectroscopy (AES) is employed for measurements of the fluorine level on the Al bondpads. From a Process control limit and a specification limit perspective, it is necessary to establish a control limit to enable process monitor reasons. Control limits are typically lower than the specification limits which are related to bondpad quality. The bondpad quality affects the die bondability. This paper proposes a simulation method to determine the specification limit of Fluorine and a Shelf Lifetime Accelerated Test (SLAT) for process monitoring. Wafers with different F levels were selected to perform SLAT with high temperature and high relative humidity tests for a fixed duration to simulate a one year wafer storage condition. The results of these simulation results agree with published values. If the F level on bondpad surfaces was less than 6.0 atomic percent (at%), then no F induced corrosion on the bond pads was observed by AES. Similarly, if the F level on bond pad surfaces was higher than 6.0 atomic per cent (at%) then AES measured F induced corrosion was observed.

Abstract A case study of Fluorine (F)-outgassing is presented in this paper that caused the corrosion of Aluminum bond pad. It will be shown that the source of F-contamination is not the typical residue left behind after the passivation etch with Fluorine-based gas chemistry and the subsequent removal of the etch polymer generated with solvent (chemical) clean. Rather, it is introduced as a result of F-outgas over a period of time from the intermetallic dielectric (IMD) film, fluorosilicate glass (FSG), during the post-fab wafer storage. The methodology used in our failure analysis (FA) lab to identify and characterize this type of failure mode is presented in the paper.

Abstract Cu needs a higher level of ultrasound combined with bonding force to be bonded to the Al pad properly, not just because Cu is harder than Au, but it is also harder to initiate intermetallic compounds (IMC) formation during bonding. This increases the chances of damaging the metal/low k stack under the bondpad. This paper presents a fundamental study of IMC as well as one example of a failure mode of Cu/Al bonded devices, all based on detailed analysis using scanning electron microscopy, scanning transmission electron microscopy, energy dispersive spectrometers, and transmission electron microscopy. It presents a case study showing a corrosion mechanism of Cu/Al ballbond after 168hr UHAST stress. It is observed that all Cu9Al4 was consumed, while very little copper aluminide remained after 168 hours of UHAST stressing.

Abstract Fluorine-induced corrosion is one of the well-known failure modes of Al bondpad leading to non-stick on pad (NSOP) issues. Exposure to moisture (H2O) and atmosphere (O2) play an important role in determining the shape and size of the Al-F corrosion defects on the Al bondpad surface. In this paper, we will propose a laboratory simulation methodology that can reproduce F-induced defects observed either at the wafer fab or the assembly house. The methodology, known as SLAT ( S helf L ifetime A cceleration T est), is used to study the relationship between the F-corrosion defects and the relative temperature (T) and humidity (RH %). It is observed that Al-F corrosion defects simulated are similar to the real defects found in wafer fab and assembly house in our previous studies. A relatively higher T and lower RH % results in the formation of the “crystal-like” defects, but if a relatively lower T and higher RH % condition is used, the “oxide-like” defects were formed. In this paper, we will compare the simulation results to the real defects found in the previous cases and discuss the failure mechanism. From the present study, the importance of controlling T and RH % during wafer storage to eliminate F-induced defects will be highlighted.

Abstract In this paper, a comprehensive study of Fluorine-induced Aluminum bondpad corrosion will be presented. Fluorine corrosion is detrimental to Al pad quality resulting in non-stick on pad (NSOP). In wafer fabrication, NSOP refers to lift-off of Au wire-bond from the surface of Al bondpad due to its poor adhesion to the contaminated pad surface. It will be shown that besides the well-known corrosion mechanism that causes NSOP, namely, via the formation of Al fluoride defect ([AlFx](x-3)-), it can also happen due to Al fluoride oxide defect, AlxOyFz. Unlike the Al fluoride defect, which has a unique “flower-like” shape, Al fluoride oxide defects exist in a variety of shapes: “Crystal-like”, “Oxide-like” and “Cloud-like”. The physical dimensions of these defects (including Al fluoride) can be dramatically different, varying all the way from micron to nanometer. In this paper, each of these morphological shapes and their respective failure mechanisms will be covered. Solutions to mitigate F-corrosion and ways to control/monitor contamination on Al pad surface in wafer fab will be presented.

Abstract X-ray photoelectron spectroscopy (XPS) is a very popular tool for identification of the chemical state of fluorine contamination on aluminum (Al) bond pads. To date, as far as the authors are aware the detailed microstructures of fluorine corrosion on bond pads have not been reported. This paper reports the microstructure evolution of fluorine corrosion on bond pads in a plastic box under specific environment conditions by using transmission electron microscopy (TEM), optical microscopy, focused ion beam and scanning electron microscopy (SEM). The elemental distributions and chemical bonding were performed by using Gatan Image Filter/TEM, energy dispersive X-ray/Scanning TEM (STEM), Auger electron spectroscopy and XPS, respectively. On Al pads with 35 atomic %, fluorine residual, corrosion was observed after around 10 days of storage and became more severe with time. The corrosion layers consist of nano-crystalline and amorphous for both single and double-layer structures.

Abstract In the authors' previous paper, we studied the defects from Fluorine-Induced Corrosion on microchip Al bondpads using SEM, EDX, TEM, AES, IC, XPS and TOF-SIMS techniques. An unknown F-Al compound was found and identified as [AlF6]3-. In this paper, we will further study the chemical mechanisms of Fluorine-Induced Corrosion on microchip Al bondpads and propose a theoretical electrochemical model to reveal the secrets of Fluorine-Induced Corrosion on Al bondpads. To support this new theoretical model, we will provide substantiating data from TOFSIMS analysis and other failure analysis techniques. According to the theoretical model of Fluorine-induced Corrosion proposed, fluorine contamination on Al bondpads will cause two types of corrosions. First, fluorine reacts with Al and forms a complex compound [AlF6]3- on the affected area, which we will refer to as Fluorine Corrosion. Once the compound of [AlF6]3- forms on Al bondpads, it will form an Anode and cause further electrochemical reactions from O2, N2 and H2O (moisture) at the Cathode. The new products of further electrochemical reactions will be [OH]- and [NH4]+ ions. The new product of [OH]- ions will react with Al and cause further Al corrosion on bondpads and form corrosive product consisting of Al(OH)3, which we will refer to as [OH]- Corrosion. The new product of [NH4]+ ions will combine with [AlF6]3- and form a corrosive complex compound (NH4)3(AlF6). This proposed corrosion mechanism results in non-stick bondpad problem.

Abstract Fluorine contamination on Al bondpads will result in corrosion, affect quality of bondpads and pose problem such as non-stick on pad (NSOP) during wire bonding at assembly process. In this paper, a fluorine contamination case in wafer fabrication will be studied. Some wafers were reported to have bondpad discoloration and bonding problem at the assembly house. SEM, EDX, TEM, AES and IC techniques were employed to identify the root cause of the failure. Failure analysis results showed that fluorine contamination had caused bondpad corrosion and thicker native aluminium oxide, which had resulted in discolored bondpads and NSOP. It was concluded that fluorine contamination was not due to wafer fab process, but was due to the wafer packaging foam material. XPS/ESCA and TOF-SIMS advanced tools were used to study the chemical and physical failure mechanism of fluorine-induced defects. An unknown Al compound was found using XPS technique and identified it as [AlF6]3- using electrochemical theories and TOF-SIMS technique. This finding was very significance, as it helped developing a theoretical electrochemical model for fluorine-induced corrosion and helped understanding of the mechanism of fluorine-induced corrosion on aluminium bondpads. It was found that fluorine contamination had formed [AlF6]3-on the affected bondpads and it had caused further electrochemical reactions and formed some new products of (NH4)+ and OH-. Then [AlF6]3- and (NH4)+ ions combined and formed a corrosive complex compound, (NH4)3(AlF6), while the OH- reacted with Al and caused further corrosion.

Abstract The corrosion effect of an I2 background during focused ion beam (FIB) analysis of Cu-metallization structures is investigated. In-situ Cu corrosion in the FIB system can occur even if the I2 gas has not been used anymore in the last 24 h before the loading of the Cu sample in the system including several vents and pump-downs of the chamber in that period. Hence the I2 can have a long-term memory effect and is not compatible with FIB analysis or modification of devices with Cu metallization. Compositional and structural analysis shows that the reaction product is CuI.

Abstract A new type metal corrosion, which occurred at contact hole of unpatterned metal wafer, is presented. This type of corrosion is strongly related to wafer queue time from metal sputtering to metal etching, it is thought to be due to chain reaction of chlorine from environmental results., fluorine from wafer edge and moisture desorbed by undermetal dielectric (ILD). Moreover, all corrosion sites accompany with poor metal stepcoverage that is caused by either large seams in W plug or rough ILD surface. Experimental results are presented which show the influence of water desorbed by different ILD materials, capability of water barrier with different barrier metal materials and post W etchback (WEB) thermal treatment on corrosion resistance. Mechanism are proposed to explain the formation of corrosion on unpatterned metal.