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Grain structure
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Proceedings Papers
ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 236-238, November 3–7, 2013,
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It is important to understand the switching mechanism of phase change material for failure analysis of PRAM device. In this study, the real time observations of phase transition and void formation mechanism of confined GST structure were investigated using in-situ TEM with multi-pulse AC biasing technique. In-situ SET switching behavior between amorphous state and crystalline state with continuous structural change was successfully observed. Volume shrink of GST, due to the phase transition, induced voids at grain boundary of crystalline phase. Excess Joule-heating after crystallization caused coalescence and migration of voids. These results may give us a crucial clue for endurance failure analysis of PRAM.
Proceedings Papers
ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 76-78, November 12–16, 2006,
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It has been reported that a sample prepared by ion beam milling has a sandwich structure with amorphous on two sidewalls and crystal in the middle. In this paper, the sandwich structure of such a single crystal TEM sample was studied experimentally. A novel sample and its fabrication process were reported. The sandwich structure can be observed directly in TEM with this sample. When the crystal layer in monocrystal silicon TEM sample is less than 18 nanometers, or when the sample is thinner than 64 nanometers, the sample will be observed as fully amorphous. Removal of the amorphous layer on the sample sidewalls is crucial to get TEM pictures of better quality.
Proceedings Papers
ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 221-224, November 14–18, 2004,
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The debugging-time for polycrystalline MEMS structural layers is the aim of this paper. A description of the fatigue phenomenon for elementary structure in the case of microactuators is presented. It is obtained by combining elementary in situ test benches of varying dimensions and cyclic actuation; in the same way, the debugging-time is determined according to the design and the structural material. Test benches have been developed allowing performance of bending fatigue tests of polycrystalline structural layers, describing the fatigue phenomenon and obtaining a constant debugging-time for a same polycrystalline layer, whatever the excitation frequency and the beams length.
Proceedings Papers
ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 563-565, November 14–18, 2004,
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In this paper, crystal damage on TEM sample sidewalls induced by FIB milling during sample preparation was studied. A novel method was invented to prepare the sample, which facilitates the direct observation of amorphous layers on the sidewall. The ion beam acceleration voltage is the dominant factor that affects the damaged layer thickness. The measured amorphous thickness is about 23 nanometers at 30Kv and 10 nanometers at 10Kv. The damage layer thickness is constant with different beam currents over the range from 30pA to 1000pA. Amorphous layer thickness also stays constant with the sample tilt angle.