This paper presents the results of a study to assess the timing measurement capabilities of e-beam probes and how they compare to mechanical probes in terms of sampling time, accuracy, and repeatability. Analysis of the data indicates that the transient response of mechanical probes is prone to overshoot and ringing, which contributes significantly to measurement error and uncertainty. E-beam probes, on the other hand, are subject to charging effects and interference which, as the authors show, can be effectively eliminated, facilitating high-speed timing measurements accurate to within a few picoseconds.

This paper discusses the use of failure analysis techniques, including high-voltage stress testing, to determine the product margin for a microprocessor manufactured on a 0.25-μm CMOS process. The first part of the approach is to define the parametric baseline of the product and differentiate normal from failure-prone behavior. The next step is to measure the margin on each unit (i.e., transistor gate) by temporarily increasing the supply voltage (Vcc) and observing its effect on leakage current. As the authors explain, the new approach facilitates the detection of potential design and manufacturing problems in a much shorter time than the hundreds of hours normally required.

The rising demand in the semiconductor industry for higher spatial resolution in the analysis of device defects has focused attention on the use of transmission electron microscopy (TEM). However, conventional TEM sample preparation may be difficult and time-consuming, and depending on the operator may result in a low yield of quality specimens. One solution to this problem is the use of focused ion beam (FIB) milling for the final stage of TEM sample preparation. However, specimens have to be mechanically thinned prior to FIB processing, and the need to characterize specific devices requires a pre-FIB preparation method to isolate specific regions on the wafer. An innovative and automated solution that isolates specific devices and prepares TEM specimens for subsequent thinning by FIB has been developed. Based on controlled microcleaving technology, the system automatically performs the pre-FIB preparation in less than 30 minutes. An important added benefit is that the target area to be analyzed can be positioned at a specific distance from the sample edge, thereby facilitating the final FIB milling stage. The thinned specimen is automatically packaged for subsequent FIB processing and TEM. Details of the method and examples showing TEM results from tungsten filled vias are presented.

The progress of modern day integrated circuit fabrication technology and packaging has made fault isolation using conventional emission microscopy via the top of the integrated circuit more difficult, if not impossible. This is primarily due to the use of increased levels and density of metal-interconnect, and the advent of new packaging technology, e.g. flip-chip, ball-grid array and lead-on-chip, etc. Backside photon emission microscopy, i.e. performing photon emission microscopy through the bulk of the silicon via the back of the integrated circuit is a solution to this problem. This paper outlines the failure analysis of sub-micron silicon integrated circuits using backside photon emission microscopy. Sample preparation, practical difficulties encountered and case histories will be discussed.

For conventional photoemission microscopy the silicon is thinned to a few tens of micrometres for backside imaging since silicon is opaque in the visble part of the spectrum. However, at wavelengths greater than approximately 1050 nm, most silicon is effectively transparent. Hence, the use of an infrared photoemission microscope (IRPEM) operating at wavelengths of 1100 to 2500 nm, usually eliminates the need for thinning, except where the silicon is heavily doped. However, the plastic encapsulation of packaged devices must be removed and the die surface polished. A polishing system has been evaluated and optimised for this purpose. Surface roughness (Ra) of 1 nm or better was obtained. Representative applications are shown and discussed.