Presentation slides for the ISTFA 2024 Tutorial session “Non-Destructive Defect Localization by Acoustic Microscopy.”

Presentation slides for the ISTFA 2024 Tutorial session “LADA and SDL—Powerful Techniques for Marginal Failures (2024 Update).”

Presentation slides for the ISTFA 2024 Tutorial session “Laser Probing.”

Presentation slides for the ISTFA 2024 Tutorial session “A Practical Tutorial on ATE-Based Electrical Fault Isolation of Digital SoCs Using Photon Emission and Laser Voltage Imaging/Probing (2024 Update).”

Presentation slides for the ISTFA 2024 Tutorial session “Electron-Beam Probing of Modern Integrated Circuits: Moving Forward while Borrowing from the Past.”

Presentation slides for the ISTFA 2024 Tutorial session “Defect Localization Methods for Device Characterization and Yield Management.”

Presentation slides for the ISTFA 2023 Tutorial session “Flip-Chip and Backside Techniques (2023 Update).”

Presentation slides for the ISTFA 2023 Tutorial session “SEM Based EBIC, EBAC, and E-Beam Probing Techniques.”

Presentation slides for the ISTFA 2023 Tutorial session “Laser Probing-Theory, Applications, and State-of-Art.”

Presentation slides for the ISTFA 2023 Tutorial session “A Practical Tutorial on ATE-Based Electrical Fault Isolation of Digital SoCs Using Photon Emission and Laser Voltage Imaging/Probing.”

Presentation slides for the ISTFA 2023 Tutorial session “LADA and SDL-Powerful Techniques for Marginal Failures (2023 Update).”

This presentation is an application-oriented tutorial on laser-assisted device alteration (LADA) and soft defect localization (SDL) techniques and how they are used to analyze marginal digital failures and identify analog circuits that are sensitive to voltage perturbations. The presentation includes well-illustrated instructions for equipment setup and validation, guidelines for collecting and analyzing images, and examples of how to interpret pass/fail sites and assess the effect of laser interactions on circuit behaviors. It also includes a brief overview of time-resolved LADA and introduces the concept of laser-induced fault isolation (LIFA).

This presentation provides an overview of photonic measurement techniques and their use in isolating faults and locating defects in ICs. It covers transmission, reflectance, and absorption methods, describing key interactions and important parameters and equations. Reflectance methods discussed include electro-optical probing (EOP), electro-optical frequency modulation (EOFM), and laser-voltage imaging (LVI). Absorption methods covered include those based on the absorption of light in semiconductors, as in optical beam induced current (OBIC), light-induced voltage alteration (LIVA), and laser-assisted device alteration (LADA), and those based on absorption in metals, as in thermally induced voltage alteration (TIVA), optical beam induced resistance change (OBIRCH), and thermoelectric voltage generation or Seebeck effect imaging (SEI). The presentation also covers thermoluminescence (lock-in thermography) and electroluminescence (photon emission) measurement methods and assesses hardware security risks posed by current and emerging photonic localization techniques.

This presentation provides an overview of lock-in thermography and its application in semiconductor failure analysis. It begins with a review of direct thermal imaging, IR transmission and detection, and the fundamentals of lock-in measurements. It compares and contrasts steady-state IR imaging with lock-in thermography and shows how lock-in frequency and the shape of the excitation signal can be varied to increase signal-to-noise ratio and reduce acquisition time, thereby exposing a wider range of defects. It also presents several case studies in which lock-in thermography is used to diagnose shorts and hot spots in packaged devices, electronic systems, and 3D assemblies.

This presentation is a pictorial guide to the selection and application of measurement methods for defect localization. The presentation covers passive voltage contrast (PVC), nanoprobing, conductive atomic force microscopy, and photon emission microscopy (PEM). It describes signal types, how the measurements are made, the sensing mechanisms involved, and the output that can be expected.

This presentation covers the basic physics needed to understand and to effectively apply backside IC analysis techniques to flip-chip packaged die. It describes the principles of light transmission through silicon and the factors that influence optical image formation from the backside of the wafer or die. It also provides information on the tools and techniques used to expose surfaces, regions, and features of interest for analysis. It describes the steps involved in CNC milling, mechanical grinding and polishing, reactive ion etching (RIE), laser microchemical (LMC) etching, and milling and etching by focused ion beam (FIB). It explains where and how each technique is used and quantifies the capabilities of different combinations of methods.

This presentation is a pictorial overview on the implementation of lock in thermography, the various types of images that can be obtained, and the interpretation of the results. It also includes a refresher on the use of discrete Fourier transforms (DFT) in signal processing.

This presentation provides an overview of photonic measurement techniques and their use in isolating faults and locating defects in ICs. It covers transmission, reflectance, and absorption methods, describing key interactions and important parameters and equations. Reflectance methods discussed include electro-optical probing (EOP), electro-optical frequency modulation (EOFM), and laser-voltage imaging (LVI). Absorption methods covered include those based on the absorption of light in semiconductors, as in optical beam induced current (OBIC), light-induced voltage alteration (LIVA), and laser-assisted device alteration (LADA), and those based on absorption in metals, as in thermally induced voltage alteration (TIVA), optical beam induced resistance change (OBIRCH), and thermoelectric voltage generation or Seebeck effect imaging (SEI). The presentation also covers thermoluminescence (lock-in thermography) and electroluminescence (photon emission) measurement methods and assesses hardware security risks posed by current and emerging photonic localization techniques.

This presentation is an application oriented tutorial on laser-assisted device alteration (LADA) and soft defect localization (SDL) techniques and how they are used to analyze marginal digital failures and identify analog circuits that are sensitive to voltage perturbations. The presentation includes well-illustrated instructions for equipment setup and validation, guidelines for collecting and analyzing images, and examples of how to interpret pass/fail sites and assess the effect of laser interactions on circuit behaviors. It also includes a brief overview of time-resolved LADA and introduces the concept of laser-induced fault isolation (LIFA).

This presentation is a pictorial guide to the selection and application of measurement methods for defect localization. The presentation covers electron beam absorbed current (EBAC), electron beam induced current (EBIC), passive voltage contrast (PVC), optical and electron beam induced resistance change methods (OBIRCH and EBIRCH), lock-in thermography, photon emission microscopy (PEM), and nanoprobing. It describes how the measurements are made, the sensing mechanisms involved, and the output that can be expected.