Two case-studies on uncommon metals whiskers, performed at the Reliability Analysis Laboratory (RAL) of Northrop Grumman Innovation Systems, are presented. The components analyzed are an Oven Controlled Crystal Oscillator (OCXO) and an Electromechanical Relay. Investigative techniques were used to determine the chemical and physical makeup of the metal whiskers and develop an understanding of the underlying effects and mechanisms that caused the conditions conducive to whisker growth.

In this paper, a failure analysis case study on a custom-built vacuum enclosure is presented. The enclosure’s unique construction and project requirement to preserve the maximum number of units for potential future use in space necessitated a fluorocarbon liquid bath for fault isolation and meticulous sample preparation to preserve the failure mechanism during failure analysis.

Today’s VLSI devices are neither designed nor manufactured for space applications in which single event effects (SEE) issues are common. In addition, very little information about the internal schematic and usually nothing about the layout or netlist is available. Thus, they are practically black boxes for satellite manufacturers. On the other hand, such devices are crucial in driving the performance of spacecraft, especially smaller satellites. The only way to efficiently manage SEE in VLSI devices is to localize sensitive areas of the die, analyze the regions of interest, study potential mitigation techniques, and evaluate their efficiency. For the first time, all these activities can be performed using the same tool with a single test setup that enables a very efficient iterative process that reduce the evaluation time from months to days. In this paper, we will present the integration of a pulsed laser for SEE study into a laser probing, laser stimulation, and emission microscope system. Use of this system will be demonstrated on a commercial 8 bit microcontroller.

This paper presents the failure analysis on a 1.5m flex harness for a space flight instrument that exhibited two failure modes: global isolation resistances between all adjacent traces measured tens of milliohm and lower resistance on the order of 1 kiloohm was observed on several pins. It shows a novel method using a temperature controlled air stream while monitoring isolation resistance to identify a general area of interest of a low isolation resistance failure. The paper explains how isolation resistance measurements were taken and details the steps taken in both destructive and non-destructive analyses. In theory, infrared hotspot could have been completed along the length of the flex harness to locate the failure site. However, with a field of view of approximately 5 x 5 cm, this technique would have been time prohibitive.

Multiple, independent, system level test failures that occurred around the same time were traced back to a short circuit on the same type of printed circuit board (PCB). The PCBs were removed from the application and sent to the authors' lab for analysis. This paper reviews the analysis techniques and results that led to the failure mechanism being identified. The discussion focuses on steps taken to exonerate the authors' lab and processes as possible sources of contamination. Additional investigation that leads to the conclusion that the issue is systemic is also covered. The paper then focuses on the containment effort as well as root cause identification at the manufacturers. It was concluded that the failure mechanism causing the short circuit in the failed PCB is due to ionic contamination trapped inside the PCB. The normal chemistry required to process the plated through holes contaminated the voids/fractures created by drilling process.