Abstract High gate to source/drain (S/D) leakage was observed at both failed pins and ET structures with random failure signatures. Detailed TEM failure analysis revealed an abnormal thin Nitrogen-rich nitride layer along the poly gate which extended to the S/D regions. Along the abnormal nitride layer, appreciable Arsenic (As) segregation occurred. The segregated As dopants at these interfaces may form a continuous conducting path, accounting for the gate to S/D leakage mechanism. The preferable As segregation at the Silicon nitride interface may be related to a vacancy-assisted As diffusion process.

Abstract The distribution of Si nanoparticles, both dimensional and spatial, is a key factor affecting the performance of non-volatile flash memory devices. A new FIB method has been developed to prepare ultra-thin plan view specimens, containing only the Si nanoparticle matrix thin film layer, from fully processed nanocrystalline flash memory devices. The morphology and distribution of Si nanoparticles were then studied by EFTEM 3D tomographic reconstruction.