Abstract EBIC (Electron beam induced current) method has been applied to the evaluation of half micron MOSFET junctions. We have been able to clearly measure the junction depth profile and the impurities density, using FESEM/EBIC which provides the highest SEM resolution currently available. We have found that it is necessary to understand the relation of the acceleration voltage and the primary electron beam current, in order to take full advantage of the FESEM/EBIC technique for junction evaluation. We have been able to experimentally demonstrate the accurate measurement of junction position.