Abstract The identification of voids and Si nodules in the Al stripes of integrated-circuit-device chips is a key part of failure analysis and process monitoring in the semiconductor industry. The optical-beam-induced resistance-change-detection (OBIRCH) method has been shown to be more useful in void detection than other methods. In this study, the wavelength of the laser used for heating the Al stripes on the Si chips has been changed from 633 to 1300 nm and the OBIRCH method has been modified to use a near-field (NF) optical probe as the heat source instead of a laser beam. Results showed that NF-OBIRCH method has three advantages over the conventional OBIRCH method: its spatial resolution is higher; the OBIRCH caused by heating can be observed using the metallized probe without interference from the optical beam induced current; and the OBIC can be observed using the apertured probe, in a high spatial resolution.