Abstract This paper gives an overview of methods for imaging the distributions of dopant in semiconductor devices. Top view imaging by means of NanoSIMS and chemical etching will be discussed as well as cross section imaging on etched transmission electron microscopy (TEM) lamellas and Scanning Spreading Resistance Microscopy (SSRM).

Abstract For years there has been a discrepancy between the importance of complex doping implantation schemes for advanced technology device performance and the ability to accurately measure the carrier concentrations with the gap widening at each technology node. With scanning spreading resistance Microscopy (SSRM) a major step forward in terms of resolution and quantification was achieved especially since the emergence of full diamond tip manufacturability and improvements in sample preparation techniques. This article discusses the non-trivial prerequisites for this success and some examples from the failure analysis routine that show the promising capabilities of SSRM. The examples include technology monitoring and failure analysis in SOI transistors and vertical surrounded gate transistors, as well as failure analysis on yield and performance issues. SSRM has reached a development stage that allows its application as routine tool for 2D-carrier profiling.