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M. Strauss
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Proceedings Papers
ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 14-20, November 2–6, 2008,
Abstract
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Abstract Recent developments in aberration-corrected transmission electron microscopy have drawn much attention from the semiconductor characterization community. Two new developments in transmission electron microscopy, image aberration correctors and probe aberration correctors, are discussed in term of their applications in characterizing gate oxide dielectrics for the IC industry.
