Microstructural diagnostic for electronic packaging development and failure analysis under industrial manufacturing conditions require fast but reliable preparation routines. The aim of the presented poster is to introduce a time and cost efficient preparation technique for FESEM (field emission scanning electron microscope) investigations with focus on typical issues in electronic packaging development and failure analysis. The new ion beam based technique acts as a low cost alternative to FIB, able to prepare much wider section areas, combined in a tool, which can also be used for standard ion beam polishing processes.

One challenge in failure analysis of microelectronic devices is the localization and root cause finding of leakage currents in passives. In this case study we present a successful approach for failure analysis of a diode leakage failure. An analytical flow will be introduced, which contains standard techniques as well as SQUID (superconducting quantum interference device) scanning magnetic microscopy and ToFSIMS as key methods for localization and root cause identification. [1]