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Lowell Herlinger
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Proceedings Papers
ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 218-222, November 13–17, 2011,
Abstract
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Abstract Shrinking gate lengths have led to increased challenges in isolating defects using conventional physical failure analysis methods. Conducting atomic force microscopy (CAFM) has been proven to be a powerful tool to isolate gate oxide defects in silicon-on-insulator devices. Some sample preparation techniques of exposing polysilicon and gate oxide, which were critical to perform CAFM scan, are discussed in this paper.
Proceedings Papers
ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 747-751, November 3–7, 2002,