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K. Ong
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Proceedings Papers
ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 345-348, November 13–17, 2011, San Jose, California, USA
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Abstract A particular failure analysis case where phosphorous contamination occurred in arsenic-implanted Si is presented. Time-of-Flight secondary ion mass spectroscopy (TOF-SIMS) can be used for fast diagnosis of this contamination which shows 300% surface density change relative to the baseline. It is found that the cause of the phosphorous contamination is due to a combination of implanter chamber re-deposit cross contamination and rapid thermal annealing (RTA) process induced drive-in effect.
