Abstract By inducing two-photon absorption within the active layer of a 28nm test chip, we demonstrate nonlinear laser-assisted device alteration and single-event upsets by temporarily perturbing the timing characteristics of sensitive transistors. Individual qualitative and quantitative evaluations are presented for both techniques, with lateral resolutions demonstrated with sub-100nm performance. A simplistic signal response rate comparison analysis of these two technologies is also presented.

Abstract This paper describes the use of Electron Beam Absorbed Current (EBAC) mapping performed from the backside of the device as a means of locating metallization defects on state of the art bulk silicon and SOI based microprocessor technologies. It builds on previous work which focused only on flip-chip SOI samples. This paper will demonstrate additional EBAC techniques and the ability to analyze devices processed in bulk silicon technology. Also included are the results obtained from an SOI device mounted in a non flipchip package type. Additional details related to sample preparation, equipment used, and improved practices are described.

Abstract This paper describes the use of Electron Beam Absorbed Current (EBAC) mapping performed from the back side of the device as a means of locating metallization defects on flip chip 45nm SOI technology.