Abstract This paper describes the use of Electron Beam Absorbed Current (EBAC) mapping performed from the backside of the device as a means of locating metallization defects on state of the art bulk silicon and SOI based microprocessor technologies. It builds on previous work which focused only on flip-chip SOI samples. This paper will demonstrate additional EBAC techniques and the ability to analyze devices processed in bulk silicon technology. Also included are the results obtained from an SOI device mounted in a non flipchip package type. Additional details related to sample preparation, equipment used, and improved practices are described.

Abstract This paper describes the use of Electron Beam Absorbed Current (EBAC) mapping performed from the back side of the device as a means of locating metallization defects on flip chip 45nm SOI technology.

Abstract This paper describes the use of a Nd:YAG laser to validate logical to physical mapping of embedded arrays found on devices packaged in “flip-chip” configurations.