Abstract Direct surface bonding of wafers in 3D integration requires perfectly smooth surfaces, with roughness values below 1 nm, usually characterized with Atomic Force Microscopy. An alternative technique, Digital Holography Microscopy is evaluated here and shown to be precise enough to differentiate adequate wafers, that is chemical mechanical polished, from non treated ones.

Abstract Scanning Spreading Resistance Microscopy electro-mechanical nanocontacts are nowadays well understood and numerous influent parameters have been identified (Bias, load, surface state of the sample, radius of curvature of the tip). Despite several simulation and modelization possibilities, calibration curves are required to ensure reliable electrical characterizations. In this paper, we bring, through nano-structural studies (Scanning Electron Microscopy, Transmission Electron Microscopy) of surface state of both SSRM tips and doped silicon surface a new understanding of tip-sample interaction during SSRM measurements. As a result of load, a nanometric residual amorphous silicon layer was observed which thickness depends on applied force and might be due to as well the plastic transformation (Si to β-tin phase) as plough-effect residues resulting from the tip indentation into the sample. It appears thus in a failure analysis process to find the best compromise between stable electrical SSRM response and sample/tip surface degradation.