Abstract A NOR-type split gate embedded Flash memory product program marginal fail with odd/even word line failure pattern. Based on cell current comparison, programming cycling tests and voltage drop measurements, the invisible cause of even/odd cells weak program failure mechanism was verified and confirmed visibly by cross sectioning and junction stain treatment. This problem was then solved by tightening photo alignment control and exposure conditions.

Abstract High contact resistance can be caused by moisture absorption in low phosphorus content BPTEOS. Moisture diffused through the TiN glue layer is absorbed by the BPTEOS during subsequent thermal processes resulting in increased contact resistance. This failure mode was studied by combining different failure analysis methods and was confirmed by duplication on experimental wafers.