The characterization of back side illumination (BSI) image sensors is challenging because of the unique construction of such sensors with silicon on top. A novel method for BSI image sensor characterization is presented in this paper. The proposed approach is based on backside circuit editing using ion beam and optical imaging techniques. This provides access to buried conductors and creates probe points for measurements that can be made using an optical, electron beam, or mechanical micro/nano prober.

The characterization of Back Side Illumination (BSI) Image Sensor is challenging because of its unique construct with silicon on top. A novel approach for the BSI Image sensor characterization will be presented in this paper. The proposed approach utilizes the circuit editing through the silicon (backside) by ion beam and optical imaging. This technique allows access to the buried conductors and creates probe points for measurements, which are typically performed by an optical prober, electron beam prober or a mechanical micro/nano prober.