Device failure analysis typically requires multiple systems for fault identification, preparation and analysis. In this paper we discuss the practicalities and limits of using a single FIBSEM system for a complete failure analysis workflow. The theoretical requirements of using a nanomanipulator for both lamella lift out and electrical testing are discussed and the current capabilities of windowless X-rays detectors for chemical analysis demonstrated. When the required resolution for failure analysis exceed the limits of a FIBSEM and TEM is required, the combination of the nanomanipulator and X-ray detector for advanced lift out and thickness controlled thinning techniques are demonstrated to prepare exceptional quality lamellae.

Here we investigate a new energy dispersive X-ray detector, which for the first time is optimized to work at the conditions typically used for high resolution imaging in a scanning electron microscope (SEM). To achieve this, significant developments have been made with regard to detector geometry and electronics. Using this new detector we are able to analyze structures in bulk semiconductor devices as well as thin sections at sub 20nm length scales in SEM. Here we outline the conditions required to carry out this analysis. Based on these results we propose workflows to accelerate failure analysis by obtaining the analysis result directly in the SEM without the need for analysis using transmission electron microscopy (TEM).