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Huipeng Ng
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Proceedings Papers
ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 207-210, November 11–15, 2012,
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This paper described a gate oxide failure case which affected the electrical parameters such as Vt and Idsat of both HV N&P MOS. A systematic problem solving approach combined with several FA techniques was applied to find the root-cause to be arsenic outgas cross-contamination.
