Abstract In case of power semiconductor analysis, classical failure localization methods are restricted in application due to thick, closed metal layers and high-dose bulk-Si implants, making backside access difficult. Furthermore, defect traces in power semiconductors are often such severe that no conclusive FA is possible anymore. The new roadmap considers these specialties and shows ways how to deal with them, showing ways to conclusive results.

Abstract Since new packaging technologies came up, sensitive failure modes, which were difficult to prove, increased. In many cases, an interaction of bending properties, thermomechanical stress and the material compounds used, cause intermittent failures related to electrical connections. Since any decapsulation might falsify analysis results, non-destructive characterization approaches are of utmost importance for future failure analysis. By means of a typical case study, the capabilities and limitations of a highly developed X-ray tool in such application has been outlined as well as the complexity of root cause findings.

Abstract Bond pad characterization is usually performed by mechanical cross-sectioning as well as pull and shear tests. However, since all these methods apply mechanical forces to the bond pad, artifacts may result. Focused Ion Beam (FIB) characterization is a mechanically stress-free characterization method, which allows more accurate conclusions regarding the intermetallic behaviour of the bonding area. Some new approaches presented here show how to improve the FIB characterization procedure and to combine it with classical characterization methods.