Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

Abstract A new, simple and cost effective photo emission microscope (PEM) for continuous wavelength measurement is proposed (SPEMMI: Spectroscopic Photo Emission Microscope). The new system uses only one sensitive detector (GENIII-NIR) for both conventional failure detection and spectral analysis. The spectrometer and the mechanical parts, used to build up the SPEMMI, are presented. Also the required calibration procedures are discussed. To demonstrate the functionality of the new system, spectra of hot carriers in a saturated NMOS transistor and of a diode in forward and reverse biased conditions are discussed. In addition, the application of SPEMMI for determination of failures that occur in industrial IoDQ-failed VLSI chips is illustrated.