Two cases of high temperature failure analyses are presented. In both cases an on-chip “heater” – power MOSFET was used to achieve high temperature for both global fault isolation and block/transistor level nodal analysis. The “heater” provides a quick and effective way of changing the device temperature without significantly modifying the bench setup. In both cases, the results show improved probability of successfully isolating the fail site, by performing OBIRCH analysis and nodal analysis.

Possible reliability failure mechanisms on mixed-signal IC are reviewed and categorized. Based on the nature of reliability and low DPPM failures on mixed signal IC, an analysis flow is proposed including identification of individual failure mechanisms, extraction of the systematic problems, and implementation of corrective actions. Finally, a case of successful isolation of a specific defect without common electrical signature on mixed-signal devices is presented.

Based on the understanding of laser based techniques’ physics theory and the topology/structure of analog circuit systems with feedback loops, the propagation of laser induced voltage/current alteration inside the analog IC is evaluated. A setup connection scheme is proposed to monitor this voltage/current alteration to achieve a better success rate in finding the fail site or defect. Finally, a case of successful isolation of a high resistance via on an analog device is presented.