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D. Isakov
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Proceedings Papers
ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 81-85, November 4–8, 2007,
Abstract
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Abstract Spectral analysis of near IR photon emissions was performed on unstrained as well as uniaxial tensile strained nMOSFETs with physical gate length of 60 nm. The significant differences in the observed spectra could be attributed to the strain-induced bandgap narrowing. This shows that photon emission spectroscopy could potentially be used as a tool to monitor strain in the nMOSFET channel.
