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Béatrice Vanhuffel
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Proceedings Papers
ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 229-233, November 6–10, 2016,
Abstract
PDF
Passive Voltage Contrast (PVC) in a Scanning Electron Microscope (SEM) or a Focused Ion Beam (FIB) is a key Failure Analysis (FA) technique to highlight a leaky gate. The introduction of Silicon On Insulator (SOI) substrate in our recent automotive analog mixed-signal technology highlighted a new challenge: the Bottom Oxide (BOX) layer, by isolating the Silicon Active Area from the bulk made PVC technique less effective in finding leaky MOSFET gates. A solution involving sample preparation performed with standard FA toolset is proposed to enhance PVC on SOI substrate.