The escalating demand for embedded non-volatile memories (NVM) across automotive, mobile, and personal computer applications necessitates continuous innovation in semiconductor devices. This study focuses on the failure analysis (FA) of split-gate NVM memory, which dominates the landscape of embedded NVM in advanced processes. Presenting a novel approach utilizing nanoprobe techniques on non-accessible floating gate (FG) of NVM, we aim to detect leakage pathways through electron beam absorb current (EBAC) analysis. Through comprehensive experimental analysis and case studies, we demonstrate the efficacy of electrical nanoprobing and innovative sample preparation techniques in understanding the mechanisms behind program and data retention failures in NVM. Our study highlights the significance of precise delayering and nanoprobe techniques on inaccessible FG and identifies potential avenues for future FA methodologies. These findings contribute to a deeper understanding of NVM failure mechanisms, paving the way for enhanced reliability or yield in NVM devices.

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