This paper presents an automated focused ion beam (FIB) workflow that revolutionizes FIB-TEM sample preparation for semiconductor analysis, particularly for NAND and DRAM devices. This system integrates with Helios 5 HX and Helios 6 HX platforms to achieve consistent, hands-free sample preparation down to ~10 nm thickness. Our approach transforms traditional manual processes into automated workflows through comprehensive best-known method (BKM) templates, custom recipes, and proprietary code development in AutoTEM and iFast software architectures. The system features advanced machine vision algorithms and custom hardware components that enable precise sample coordination, allowing for both vertical and perpendicular TEM sample preparation from 3D structures at any wafer depth. Implementation results demonstrate significant improvements over manual processes, including thousands of hours in workforce savings, reduced material waste, faster throughput, improved data consistency, and minimized human error in DRAM and NAND structural analysis.

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