In this paper, we present case studies of localizing resistive open defects using various FA techniques, including two-terminal IV, two-terminal Electron-Beam Absorbed Current (EBAC), Electron Beam Induced Resistance Change (EBIRCh), Pulsed IV, Capacitance-Voltage (CV) and Scanning Capacitance Microscopy (SCM). The advantage and limitation of each technique will also be discussed.

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