In response to a continually rising demand for high performance and low-cost devices, and equally driven by competitivity, the microelectronics industry excels in meeting innovation challenges and further miniaturizing products. However, device shrinkage and the increasing complexity of device architecture require local quantitative studies. In this paper, we demonstrate with a case study on a nanocapacitor, the capability of transmission electron microscopy in electron holography mode to be a unique in-situ technique for mapping electric fields and charge distributions on a single device.

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