In this paper, we discuss the use of spontaneous Photon Emission Microscopy (PEM) for observing filaments formed in HfO2 Resistive Random Access Memory (ReRAM) cells. A CCD and an InGaAs camera can be used to quickly observe photon emission in both reverse (reset) and forward (set) bias conditions. An electric field model and a uniform Poisson spatial distribution model are used to explain the intensity and location of the experimental data. Single filament fluctuations and multiple filaments are also observed for the first time.

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