This paper assesses the capabilities of scanning acoustic tomography (SAT) for the analysis of bonded silicon wafers. In order to quantitatively evaluate detectability and resolution, the authors acquired images from samples prepared with artificial voids. The samples consisted of two wafers, a cap wafer and a base wafer with dry-etched pits on a silicon-oxide layer. Cap wafers of different thicknesses were used along with transducers of appropriate focal length. The paper describes the experimental setup and test procedures in detail as well as the results.

This content is only available as a PDF.