This paper describes how electron beam induced current (EBIC) analysis is used to determine the doping profile of p-n junctions and identify defective devices. The limitations of both chemical etching and EBIC are discussed as is the use of ion milling as a potential method for enhancing resolution. The findings in this paper add to the understanding of EBIC and provide insights to further improvements in its use in failure analysis.

This content is only available as a PDF.