Abstract
This study investigates the application of 3D electron tomography to enhance transmission electron microscopy (TEM)-based failure analysis of 3D FinFET transistors. Traditional TEM analysis is challenged by projection effects due to the thickness of the sample, complicating accurate defect characterization in miniaturized semiconductor structures. The defects seen by conventional (2D projection) TEM imaging are unclear and difficult to interpret. Leveraging scanning transmission electron microscopy (STEM) and energy dispersive X-ray spectroscopy (EDS) tomography techniques, the study presents detailed examinations of two semiconductor samples exhibiting high leakage currents. Results reveal etched-out epitaxial regions subsequently filled with gate materials, critical for understanding device failure. By digitally reconstructing TEM lamellae in three dimensions, this approach overcomes projection artifacts and precisely localizes defects. The findings underscore the efficacy of 3D electron tomography in semiconductor failure analysis, offering insights crucial for improving device reliability and manufacturing processes in advanced semiconductor technologies.
