Abstract
In this paper, the failure analysis of InGaAs/GaAs-on-Si nanoridge laser diodes using the electron beam based nano-probing technique is presented. These III-V laser devices are fabricated using the nano-ridge engineering approach where the misfit dislocations generated during the growth of InGaAs/GaAs layers on silicon substrate are confined away from the active region. It is observed that the applied electrical stress causes degradation of electrical properties of the laser devices. We demonstrate the application of the electron beam induced current (EBIC) technique for failure analysis of nano-ridge lasers. This high-resolution technique helps to visualize the local distribution of the electric field in a nano-ridge p-i-n diode. The EBIC signal from the reference (electrically unstressed) device and the electrically stressed device is compared and hence can be used to identify the defective region. Furthermore, in-situ electrical stress experiments are performed for systematic analysis of the impact of electrical stress on the EBIC results.
