Abstract
Electrical characterization is a critical step in the failure analysis workflow, a sequence that often ends in high-resolution imaging in the transmission electron microscope (TEM). Scanning TEM electron beam-induced current (STEM EBIC) is a technique that effectively combines these methods by performing electrical characterization at each imaging pixel, with the electron beam acting as a local current source. This work highlights the specimen preparation technique using the Ga FIB system followed by post-FIB Ar ion milling for STEM EBIC analysis. We present STEM EBIC as a technique to evaluate the surface quality of the specimens and to characterize the electronic properties of advanced devices at high resolution. With STEM EBIC, inactive and active finFET structures were clearly distinguished and improvements in sample quality from post-FIB Ar ion milling were evident.
