Abstract
Imec has developed a fully-functional integrated forksheet field-effect transistors (FETs), which is the most promising architecture for advancing beyond the GAA (Gate-All-Around) nanosheet generation for scaling and performance improvements past the 2nm technology node. From a manufacturing perspective, forksheet devices are extremely complex to process and requires accurate and sensitive analytical instruments like the AKONIS SIMS tool.
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2024
ASM International
Topics
Semiconductor etching
Issue Section:
Poster Session
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