Abstract
Time-resolved emission microscopy (TREM) enables non-intrusive failure analysis of integrated circuits through photoemission detection at picosecond resolution. While photoemission occurs in both functional and faulty ICs, certain emission patterns distinctively indicate device defects. The primary mechanism driving this phenomenon is hot carrier luminescence in silicon, where carriers with excess kinetic energy release photons through intraband transitions. In CMOS logic, these emissions occur when MOSFETs switch between logical states, generating drain-to-source current flow. However, modern large-scale ICs present unique challenges for photoemission analysis: their lower operating voltages and reduced switching currents result in fewer photon emissions, predominantly in the infrared spectrum. We address these limitations by implementing superconducting-nanowire single-photon detectors (SNSPDs), enabling high-sensitivity photoemission microscopy for advanced IC failure analysis.
