Abstract
Electron-beam-induced current (EBIC) analysis at device cross-sections has emerged as a powerful technique for semiconductor device characterization. Unlike traditional top-down approaches, cross-sectional EBIC directly visualizes junction profiles and depletion region behavior under various bias conditions. This paper synthesizes several years of research through five case studies demonstrating cross-sectional EBIC applications. Our methodology combines precise sample preparation techniques—including laser cutting with polishing or direct cleaving, followed by focused ion beam (FIB) fine-polishing—with variable electron beam landing energies to examine junctions at different depths. For advanced technology nodes, we emphasize the importance of EBIC resolution and noise floor optimization for reliable results. We demonstrate how the observed space charge region width correlates with doping concentration and can be modulated through reverse bias application, providing valuable insights into device characteristics.
