The development of modern power semiconductors requires the reduction of the resistance in the on-state of the device. One way to accomplish this is to reduce the bulk silicon thickness. To reach low final Si thicknesses, the grinding processes have to be adapted and optimized and new process-flows, such as dicing before grinding (DBG), must be employed.

fractography, fracture pattern, grinding, power semiconductors, silicon chips, thickness, thinning
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2023
ASM International
Topics
Fractography Power semiconductor devices Semiconductor wafer fabrication Circuit components
Issue Section:
Poster Session
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