In this paper, we present a new application of electron beam induced resistance change (EBIRCH) as a means to spatially isolate wordline shorts in 3D replacement gate NAND for high-precision physical failure analysis (PFA).

3D replacement gate NAND, electron beam induced resistance, physical failure analysis, wordline shorts
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2023
ASM International
Topics
Semiconductor wafer fabrication
Issue Section:
Poster Session
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