Secondary ion mass spectrometry (SIMS) is a well-established method in semiconductor manufacturing process control and development for trace metal and organic contaminant detection, as well as for depth profiling of ultra-thin film stacks and total dopant concentrations. Using a focused ion beam (FIB) as the primary ion beam provides a versatile and highly sensitive analytical technique with lateral resolution down to a few tens of nanometers, an appropriate technique for targeted failure analysis on functional device structures. This paper presents an example to show the potential of FIB-SIMS to support failure analysis, concentrating on practical aspects of the technique.

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