Nowadays, semiconductor components are widely used in home electronic appliances, vehicles, industrial motor controls and beyond. The performance and reliability of these components are becoming more crucial and critical. Generally, a semiconductor component consists of lead frames, wires, dies and die attaches. Within the die, the die backside metallization, also known as “BSM,” plays an important role in electronic component manufacturing. The BSM is a layer that promotes good adhesion, electrical properties and long-term stability as a conductive pathway to the circuits. As such, the inspection on BSM is needed to ensure robustness. Several conventional methods have been developed to analyze the die backside metallization. In this paper, we will discuss the inspection on backside metallization and comparison among five sample preparation methods: mechanical cross section with ion milling, mechanical cross section with FIB cleaning, die frontside decapsulation with FIB cut from die surface and FIB cut from die sidewall, and component frontside lapping with FIB from the remaining silicon. Result comparison will be discussed in case studies and the advantages and disadvantages of the five methods will be compared.

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