This paper presents a method that allows top view SEM inspection on GaN devices previously subjected to PEM analysis from the backside and the associated sample preparation procedures. By filling the backside cavity with glob-top resin and epoxying the device to a piece of silicon, it is possible to remove all covering layers with a sequence of wet etches. A dried Ag liquid strap eliminates SEM charging problems and backside laser marks are made visible from the front side using an IR wavelength. The paper describes each step of the process in detail along with the results of the frontside SEM inspection.

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