This paper describes how electron beam induced current (EBIC) analysis is used to determine the doping profile of p-n junctions and identify defective devices. The limitations of both chemical etching and EBIC are discussed as is the use of ion milling as a potential method for enhancing resolution. The findings in this paper add to the understanding of EBIC and provide insights to further improvements in its use in failure analysis.

chemical junction staining, electron beam induced current, FIB cross section, ion beam milling, mechanical polishing, p-n junction, SEM imaging
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2021
ASM International
Topics
Specimen preparation Scanning electron microscopy Focused ion beam tomography Lapping and polishing Semiconductor etching Circuit components
Issue Section:
Poster Session
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